High Thermal Performance Ga2O3 on Insulator Field-Effect Transistors

High performance Ga
₂
O
₃
MOSFETs are fabricated on a SiO
₂
/Si substrate. A high I
_ON
/O
_FF
ratio of 9 orders and high G
_m,ext
of 20 mS/mm were achieved. Comparison between DC and Pulse measurement reveals that the self-heating effect of Ga
₂
O
₃
MOSFET degrades the I
_ON
from 105 mA/mm to 95 mA/mm. A high I
_ON
/I
_OFF
ratio of 7 order was maintained by the device at high temperature of 250
^°
C, revealing the good thermal performance of Ga
₂
O
₃
MOSFETs.