Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires

This work studies the influence of fin width and back bias on the low-frequency noise of long channel fully depleted SOI nanowires. Devices with fin widths of 20nm, 45nm and 105nm were studied under different back bias (V
_sub
) conditions, varying V
_sub
from -40V to 40V. Nanowires operate in linear regime with gate voltage overdrive varying from 0mV to 200mV. Results show low-frequency noise increase for both positive and negative back bias for long channel devices. For the input referred noise power spectral density as a function of W
_fin,
it was possible to observe a slight increase of S
_VG
with W
_fin
decrease.