HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

We present here the MOSFET model HiSIM (Hiroshima University Starc IGFET model). As HiSIM employs the drift-diffusion approximation and preserves correct modeling of the surface potential in the channel, it is not only accurate, but additionally, model parameter number is small, parameter interdependence is removed, and parameter extraction becomes easy. Measured current-voltage characteristics of advanced MOSFETs are thus reproduced with only 19 model parameters.