Analysis of MC Model & DD Model on DG-MOSFET for Different Gate Length with Different Gate Oxide

In this brief an attempt has been made to estimate the On current of DG-MOSFET by different simulation approaches. The effect of high k gate oxide on drain current by comparing Monte Carlo (MC) model and Drift Diffusion (DD) model. It is observed that the MC simulation gives higher On current as compared to DD simulation because it will consider the effect of velocity overshoot due to nonstationary carrier transport.