Development of extreme microanalysis technology for metallic impurity on a silicon wafer surface

Even if metallic contamination on a silicon wafer is extremely low, it affects quality of semiconductor devices. High sensitivity analytical technique has been required to control such trace level of metallic contamination. A new tool that is combination of the latest model ICP-MS and vapor phase decomposition euqipment demonstrated about 10 to 100 times better detection limit, e.g. 1E5 to 1E6 atoms/cm2, compared with the conventional techniques.