A 22nm FDSOI Technology with integrated 3.3V/5V/6.5V RFLDMOS Devices for IOT SOC applications

22nm FDSOI is an excellent technology for IOT SOC RF/mmWave applications because of low complexity and cost, low voltage libraries, and high RF/mmWave performance [1-2]. SOC applications require require high voltage devices for on chip power management (e.g. back gate bias generation), IO transistors, sensor drivers, and off chip output drivers. These integrated circuits need technologies with high breakdown voltage (BV
_dss
), and low on-resistance (R
_DSon
). For switching and RF applications these devices also need to have high f
_T
and f
_MAX
. In this paper RFLDMOS devices integrated into a 22nm FDSOI technology are described. The RFLDMOS devices include 3.3V, 5.0V, and 6.5V RFLDMOS devices. These devices have been stressed and pass 10 year life time. The 3.3V RFLDMOS devices have 55Ghz f
_T
, 65 GHz f
_MAX
, 9.6V BV
_dss
, and 1.16 mOhm*mm
²
R
_DSon
. The 6.5V RFLDMOS devices have 41GHz f
_T
, 69 GHz f
_MAX
, 12.2V BV
_dss
, and 1.86 mOhm*mm
²
R
_DSon
. These devices represent the best reported BV
_dss
, R
_DSon
, f
_T
and f
_MAX
for any RFLDMOS in an advanced node (<;28nm) technology.