A New Photodetector on SOI

In this work, we present a novel type of photodetector based on the Z2-FET (zero impact ionization and zero subthreshold swing) device. A dynamic coupling effect is used to form the carrier injection barriers that block the current flow in the Z2-FET. Our TCAD simulation shows that under illumination, photoelectrons accumulating under the gate effectively reduce the hole injection barrier, modulating the turn-on voltage and leading to photoresponse with excellent sensitivity and unique advantages.