Embedding Langmuir-Blodgett Carbon Nanotube Array to Enhance Performance of Amorphous InGaZnO Thin Film Transistor

In this work, we have proposed and achieved a hybrid thin film transistor (TFT) by embedding single-walled carbon nanotube (SWNT) array into an amorphous indium gallium zinc oxide (a-IGZO) channel. The SWNT array has been integrated into the TFT channel by Langmuir-Blodgett method. The proposed hybrid channel has improved the carrier mobility of the TFT by four times and on/off current ratio by 20 times compared to that of the pure a-IGZO channel TFTs. In the hybrid channel, SWNT array works as the high-speed carrier transport path. Both the density and alignment of the SWNTs in the array are critical for controlling TFT performance.