Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 10
¹²
), high operation speed (<;20ns), good data retention (10
⁴
@85C), low operation voltage (<;3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.