SiC-FET-type NOx Sensor for High-Temperature Exhaust Gas

We have developed a SiC-FET-type gas sensor that enables highly sensitive NO detection in high-temperature exhaust gas. The gate of the FET is a gas detection layer consisting of yttria-stabilized zirconia, nickel oxide, and platinum, which are deposited on the SiC substrate. The threshold voltage of the FET depends on the NO concentration. Experimental results demonstrate that the FET-type sensor can detect NO concentration less than 1 ppm, thus meeting the specifications required to satisfy the strict regulations for exhaust gas in the next generation.