Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal Dichalcogenide Transistors

Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS
₂
), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows transistor performance including carrier mobilities, on/off ratios, on-current densities, and subthreshold swings were also improved significantly with Cu doping.