A Novel Super-Junction Structure to Improve SEB Performance

In this paper, a novel structure is proposed to improve SEB performance of 650V SJVDMOS. The hardened structure integrates a graded doping buffer layer and a P type buried layer. 2D Synopsys sentaurus TCAD simulation is used to evaluate the SEB performance of the device. The simulation results show that the safe operating area (SOA) of the new device is greatly increased under the heavy ions incidence. The SEB threshold voltage of the device improves from 105V to 695V, successfully achieves SEB immunity. At the same time, the hardened structure also maintains good steady-state characteristics.