A Base Resistance Controlled Thyristor with N-type Buried Layer to Suppress the Snapback Phenomenon

In this paper, a new base resistance controlled thyristor with N-type buried layer (NBL-BRT) is proposed. The N-type buried layer introduces an electron potential trap to extract electron current from the n-channel MOSFET to thyristor region, which improves the effective trigger current, and then suppresses the snapback phenomenon during forward conduction state. Meanwhile, NBL-BRT maintains high blocking capability by controlling the doping level (N
_BL
) of the N-type buried layer. Compared with conventional BRT, the proposed BRT structure with doping level of N-type buried layer of 1.0 × 10
¹⁵
cm
^-3
reduces the ΔV
_SB
by 64.21%.