Plasma oxidation induced ultra-low power performance from a-SiNx:H resistive switching memory

a-Si
_0.28
N
_0.21
O
_0.51
:H resistive switching memory (RRAM) with ultra-low power is obtained by plasma oxidation of a-Si
_0.48
N
_0.52
:H films in PECVD. It is found that the current of Al/a-Si
_0.28
N
_0.21
O
_0.51
:H/Si device in the high and low resistance states is obviously lower than that of the Al/a-Si
_0.48
N
_0.52
:H/Si. Especially the current of the low resistance state reaches 10
^-8
A when the read voltage is 0.5 V. Based on the analysis of XPS, we have investigated the origin of the ultra-low power resistive switching performance of Al/a-Si
_0.28
N
_0.21
O
_0.51
:H/Si device in detail.