Recent Challenges in Compact Modeling of Short-Channel Effect for Leading-Edge Types of MOSFETs

The short-channel effect (SCE) of different MOSFET types is studied. The investigation considers power MOSFETs, which are integrated on a chip together with the advanced circuit elements. Different geometry modifications of the drain extension to sustain the high voltage (HV) are studied. It is demonstrated that an optimization of the device structure is possible by considering the two dimensional extension to achieve high breakdown voltage. However, the 2D structural extension induces stronger SCE at the same time. Modeling of the SCE, for the structural variations, is proposed in a compact form applicable for circuit simulation enabling circuit optimization. The developed model has been implemented into the HiSIM model and verified for accuracy and predictability.