An Optimized GaAsSb/InGaAs Heterojunction L-shape Tunnel Field-Effect Transistor

In this paper, we propose and investigate a GaAs
_0.5
Sb
_0.5
/In
_0.53
Ga
_0.47
As heterojunction L-shaped tunnel FET (HL-TFET) using Sentaurus TCAD simulations. Further, the HL-TFET is optimized to separately control ON-current and OFF-current by inserting a wide-bandgap spacer region between the channel and drain regions. Simulation results indicate that ON-current of HL-TFET is increased about three orders of magnitude compared with conventional L-shaped TFET. What's more, the optimized HL-TFET not only keeps high ON-current but also reduces OFF-current effectively. It is demonstrated that ON-current as high as 250 μA/μm with an I
_ON
/I
_OFF
ratio of 7.5×10
⁹
at V
_ds
= 0.5 V is achieved in an optimized HL-TFET.