MoM Capacitor Variation Models for FinFET Era

Double Patterning (DP) is imperative process for FinFET, and Metal-Oxide-Metal (MoM) capacitors are crucial passive devices in mixed-signal/analog integrated circuits, the process variation of DP is increased by Metal space, width and dielectrics constant which will be reflected by MoM corner variation. Conventionally, only skew capacitance or resistance to create best and worst case which not including metal cancellation will lead to larger deviation to silicon. A methodology to create best and worst case of MoM considering metal cancellation is proposed for narrowing that gap in this paper.