Performance Enhancement by Gate Tunable Strain in p-type Piezoelectric FinFETs

The gate tunable strain induced by piezoelectric effect is introduced to boost the performance of p-type silicon FinFETs. The gate voltage modulated channel strain is analytically modeled based on the principle of piezoelectric effects, and the carrier transport is numerically simulated by non-equilibrium Green's function approach with strained 6-band k·p Hamiltonian. The simulation results demonstrate that piezoelectric p-type FinFETs can achieve more than 20% ON state current (ION) enhancement and steeper subthreshold swing (SS) as compared with the devices without strain. The impact of channel length and orientation are also investigated.