Detailed Modeling Recombination in PID-affected N-type Mono-crystalline Silicon Solar Module

In this paper, the double-diode equivalent model of solar cell is used to analyze the recombination occurring in p-type mono-crystalline silicon solar module affected by potential induced degradation (PID). By comparison with the measured data and EL images, it reveals that more recombination current (Id
₂
) is generated in solar module undergoing PID stress. The variation of I
_d2
I
_d1
shows that recombination current plays a main role in output current of solar module under low voltage. What's worse, the value of I
_d2
Id
₁
becomes larger after PID stress. These results indicate that the p-n junction may be destroyed by PID.