Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found on the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the hole because of Fermi-level pinning effect. In this contribution, low temperature deposited, dopant-free chromium trioxide (CrO
x
, x\lt3) with high stability and high performance, is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. Implementing the advanced holeselective contacts with CrO
x
/Ag/CrO
x
on the p-type silicon solar cell results in a power conversion efficiency of 20.3%.