MBE Growth Process Investigation of Mid-Infrared Quantum Cascade Lasers

In this work we discussed the MBE technology of QCLs based on GaAs and InP material systems. The investigation of growth conditions and preparation method of epitaxial process of bulk InAlAs cladding layer in InAIAs/InGaAs/InP QCLs is presented. The minimization of strain relaxation in InGaAs/AIGaAs/GaAs devices due to optimal growth condition is discussed. The heterostructure parameters were controlled mainly by High Resolution X-Ray Diffraction technique, however the electro-optical measurement constitute final parameters verification for manufactured devices.