Photo-Induced Electron Emission Properties of N-Doped Carbon-Based Very Thin Films

The carbon-based very thin films were deposited on silicon substrate and double side polished sapphire or quartz glass by RF reactive magnetron sputtering using a carbon target and gas mixtures Ar, N
₂
and H
_2.
Concentration of elements in the films was determined by RBS and ERD method simultaneously. SEM was used to investigate the morphology of carbon thin films. Raman spectroscopy was used for intensity ratios determination I(D)/I(G) of D and G peaks of carbon films. Photo-induced electron emission method was used for the study of electron emission properties of carbon-based very thin films. An examination of the results highlights how the technology and the structure of carbon films on quartz or sapphire glass play a key role in enhancing efficient escape of generated photoelectrons.