Large-Signal Metal-Insulator-Graphene Diode Model on a Flexible Substrate for Microwave Application

In this paper, a metal-insulator-graphene (MIG) diode is designed, fabricated, and modelled. The MIG diode is realized on a 50 μm- Kapton substrate based on graphene material grown by chemical vapor deposition (CVD) and TiO
2
as a barrier material. The flexible MIG diode has several superior properties compared to a diode using flexible Si, carbon-nanotube (CNT) or ZnO especially for microwave application. Therefore, it is critical to establish a model of the MIG diode for circuit design. A SPICE-compatible model of the MIG diode is demonstrated for the first time to the best of our knowledge. The Lambert Wfunction is used to extract the intrinsic parameters of the diode. The equivalent circuit including extrinsic elements is verified up to 20 GHz. The main contribution of this paper is to show that the SPICE model is able to predict the behaviour of MIG diodes.