Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure | IEEE Journals & Magazine | IEEE Xplore

Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure


Abstract:

The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-μm. The quantum dot la...Show More

Abstract:

The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-μm. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature threshold current density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
Published in: IEEE Photonics Technology Letters ( Volume: 12, Issue: 6, June 2000)
Page(s): 591 - 593
Date of Publication: 06 August 2002

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