Strain Consideration of Charge Plasma Structure on Junctionless Transistor With Line Edge Roughness

In this paper, we consider the strain effect of charge plasma structure when the characteristics of junctionless MOSFET with line edge roughness (LER) variation is studied. It is found that strain can lower the fluctuation rates of threshold voltage (V
_th
), on- (I
_on
) and off-state (I
_off
) current, while it doesn't impact that of the subthreshold swing (SS). Besides, it can also enlarge the average values of I
_on
, V
_th
and SS, but it reduces the average I
_off
, at the same time. It implies that considering the strain effect makes our research on charge-plasma structure closer to the reality.