Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation

The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation. The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant. Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region. Significantly, the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.