A Novel Hole-Path and Carrier-Stored IGBT with Low Switching Loss and On State Voltage

A novel hole path and carrier stored insulated gate bipolar transistor (HP-CS-IGBT) is proposed and investigated. In our work, the hole path structure helps to reduce the turn off time in switch-state and the carrier stored structure helps to reduce the on-state voltage (V
_CE(sat)
), respectively. When the turn-off loss (E
_off
) is equal to 5 mJ/cm
²
, the on-state voltage of the 1200V/40A rated HP-CS-IGBT is as low as 1.46V, which has been reduced by 30% compared to the conventional IGBT. Moreover, HP-CS-IGB also overcomes the inherited weak relationship between the forward blocking capacity and on state voltage compared to the conventional carrier stored trench-gate bipolar transistor (CSTBT).