High Q Half-turn Split Inductor for RF Applications

Passive components are indispensable in the design and development of Radio Frequency Integrated Circuits (RFIC). In this paper half-turn split inductor is presented with higher quality factor by 31.6% and inductance 15% over conventional planar inductor. High quality factor is a primary requirement to improve the performance of the circuit at high frequency. The quality factor and self resonant frequency is limited by parasitic capacitance effect, current crowding effect and proximity effect. In this proposed structure the quality factor is improved by dividing the each conductor turn by half and placed in to two different layers. When each conductor turns split in two layers the effective capacitance is reduced, hence quality factor is increased. The proposed structure is implemented in the area 60μm × 60μm and simulated by using the SONNET (EM) simulation tool to obtain the results.