Spatial Current Dynamics Of Turn-On Of High-Power Laser-Thyristors Based On AlGaAs/GaAs Heterostructures

A two-dimensional dynamic simulation of the laser-thyristor turn-on has been carried out. It has been found that the localization of the current during laser-thyristor turn-on is determined by the presence of impact ionization. Spatial current localization reduces the radiative efficiency and the peak power only in the laser pulse generation mode with a duration of few nanoseconds.