First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology

This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwidth of [27.5–31]GHz and [37–39.5]GHz, respectively and demonstrate over these bandwidths a saturated output power of 40dBm and 38dBm, respectively. Each stage use 8×50μm gate width HEMTs fabricated with a 0.15μm gate length on 70μm thick SiC substrate.