Electrode material dependence of resistive switching behavior in Ta2O5 resistive analog neuromorphic device

High-speed analog resistance switching characteristics were demonstrated in TiN/TaO x/ Ta
₂
O
₅
/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by DC and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaO
_x
/Ta
₂
O
₅
/Pt device. We deduce that the electrodes reactivity with oxygen plays a key role for the analog resistance switching.