GaN pushing the limits of high-speed switching

GaN HEMTs offer an unprecedented combination in terms of power handling and speed, which makes them the ideal candidate for microwave and mm-wave high-power amplifiers as well as fast switches in power electronics. This paper presents three examples going beyond these two classical fields of application, which demonstrate the high-speed switching capabilities of GaN HEMTs: A discrete broad-band envelope tracking modulator, a microwave digital power amplifier, and a fast high-current laser driver.