Performance enhancement of organic phototransistors with a hybrid gate dielectric

Organic phototransistors (OPTs) have been fabricated and characterized with a stacked dielectric layer of PMMA/SiO
₂
film. Experimental results show that SiO
₂
layer provide an excellent light scattering to enhance the photocurrent under the illuminate because of its mesoporous nanoparticles properties. The optoelectronic characteristics of OPTs show that the I
_DS
is -0.07pA and field-effect mobility is 0.01 cm
²
/Vs. OPTs irradiated by the visible light source of 11 W/m
²
show I
_DS
raising to -0.17 μA, and μ to 0.026 cm
²
/Vs.