Wafer level heterogeneous integration of a millimeter-wave transceiver module and its EMC problems

This paper presented the design methodology of 3 dimensional wafer level integrations of packaged transceiver. Low noise, power amplifier, two mixers, packaged oscillator, 1/4 quarter mode SIW filter as well as couplers were designed by using wafer level heterogeneous integrations. The noise figure of the transceiver is about 4 dB with its gain 23dB at 30GHz, the output power is about 2 W. The packaged oscillator can be designed with its packaged low noise amplifier without shielding.