A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer

A high-voltage SOI-LIGBT with high turn-off speed and low turn-off loss (E
_OFF
) is proposed in this paper. The proposed SOI-LIGBT features a Low-doped Buried N-layer (LBN) region and an emitter-side Electric Potential Modulation Trench (EPMT) shorted with the P+ emitter. By employing the LBN and EPMT, fast extraction of the stored carrier and the high turn-off speed are realized due to the accelerated depletion of N-drift region. The simulated results show that the proposed SOI-LIGBT can achieve a 73% lower turn-off loss compared with the conventional SOI-LIGBT at the same V
_ON
of 1.52V. Moreover, the hole heat flux distribution in the proposed device predicts an improvement of ruggedness under high-voltage and high-current conditions.