Application-driven device/circuit co-simulation framework for power MOSFET design and technology development

Physics-based device-circuit co-simulation turns out to be an extremely valuable tool to guide and optimize process technology development and device design for high-performance power MOSFETs. It is particularly well-suited to the need of emerging trend of integration of discrete power devices and analog ICs in the same package. In this article, we outline the key features and benefits of such an integrated design framework.