High avalanche capability specific diode part structure of RC-IGBT based upon CSTBT™

A thin RC-IGBT is facing to a difficulty of certifying a stable BV characteristic among the three portions, i.e. IGBT (pnp), Diode (pin) and termination (pnp too). We propose a high avalanche capability specific Diode part structure of the RC-IGBT based upon CSTBT™. This stabilization of the BV characteristic was realized by adjusting the BV balance of three portions described above. One of the successful approach was lowering the Diode's BV by widening Diode's trench pitch (W
_DTP
).