Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The design of high-performance devices requires a detailed understanding of the electronic structure at the interface. However, the relation between the interface state charges to the electrical failure, such as breakdown of the oxide in the transistor remains unknown. Herein, the defect-driven interfacial electron structure of the Ti/ZrO
2
/Al
2
O
3
/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects induced by oxygen-atom missing is found the main reason for the device failure. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.