Self-aligned metallic source and drain fin-on-insulator FinFETs with excellent short channel effects immunity down to 20 nm gate length

In this paper, a fin-on-insulator (FOI) FinFET structure with a metallic source and drain (MSD) and HKMG-last processes was investigated extensively. FOI FinFETs demonstrated ten times of leakage current reduction compared with conventional bulk FinFET using p-n junction. In contrast to bulk FinFETs, MSD FOI FinFETs demonstrate a greatly improved control of short channel effects (SCEs) (~47% DIBL and ~32% SS reductions for 20-nm-Lg PMOS) compared to conventional bulk FinFET. The drive ability of 20-nm-Lg FOI transistor is increased about 30 times with full Ni(Pt) silicide process, up to 547 μA/μm for NMOS and 324 μA/μm for PMOS at V
_DD
= 0.8 V. However, the excellent controls of SCEs and channel leakage were also obtained. No obvious increase of leakage happens in FOI FinFETs using fully Ni(5%Pt) silicide process.