TCAD assisted analysis of Silicon Carbide based fast neutron detector for nuclear applications

TCAD simulation study has been carried out to assess the performance of Silicon Carbide (SiC) based fast-neutron detector in harsh environment, as often encountered in nuclear facilities. A 3D-structure of SiC Schottky diode detector has been modeled by extracting model parameters from recent experimental results. Effect of temperature over detector characteristics has been analyzed. Forward characteristics shows expected decrease in built-in voltage with temperature while Reverse characteristics reveals the increment in reverse leakage current. This reverse leakage current along with background radiation noise would limit the operation of detector. We have demonstrated that SiC based fast-neutron detector would maintain its integrity and can be successfully operated as a detector up to 500 °C.