Dynamic performance of 4H-SiC power MOSFETs and Si IGBTs over wide temperature range

The temperature dependence of the static and dynamic performance of 1.2kV 4H-SiC planar/trench MOSFETs are compared with 1.2kV Si IGBTs over a wide temperature range of 90K to 493K. The static characterization includes static on-resistances (Ron) and threshold voltages (Vth). The dynamic characterization focuses on the temperature dependence of switching energy losses (Esw). For the first time, the interface traps related degradation of the dynamic on-resistance is analyzed at cryogenic temperatures. The turn-on transients of the SiC planar MOSFET exhibit a smaller delay time. However, the 4H-SiC trench MOSFET suffers much longer delay at switch-on process, especially at lower temperatures due to more interface traps. The effects of interface traps on degradation of dynamic on-resistance are examined.