TCAD modeling of a lateral GaN HEMT using empirical data

This work presents a procedure for creating high-fidelity TCAD models of lateral GaN/AlGaN FETs. This modeling process is based on iterative refinement using experimental data as well as known device geometry. By tuning charge density in the channel of the device and scattering under the gate, both the transfer and forward curves of the device were accurately modeled. Knowledge of device geometry and anisotropic physics was used to accurately model the non-linear terminal capacitances of the device. This modeling procedure was performed on both a recessed gate device with full knowledge of the device's geometry. The model developed here will be used in future work to assess the impact of design decisions.