Low frequency noise of silicon based tunneling field effect transistors

In this paper, Low Frequency Noise(LFN) characteristics of Fully Depleted Silicon On Insulator (FD-SOI) Tunneling Field Effect Transistor(TFET) are analyzed and the level of LFN in TFET is also compared with that of Metal Oxide Semiconductor Field Effect Transistor(MOSFET) fabricated with the same process. The level of LFN in TFET is observed much higher than that of MOSFET. That is because LFN in TFET is largely affected by the tunneling probability and fluctuation of tunneling probability is much more vulnerable to electric field induced traps than that of carrier number and mobility described as LFN mechanism of MOSFET.