Design & development of 45 watt GaN HEMT power amplifier with high speed gate switching for pulsed radar application

In this work design and development of 45 Watt, GaN based Class AB RF power amplifier is presented for pulsed radar applications at S-band. The proposed design is based on non linear model of CREE® CGH40045 RF Transistor. Measured results indicate that RF Amplifier has achieved output power of 45W (i.e 46.5 dBm) with PAE of 50.86%. In this paper, pulse to pulse stability analysis of signal is also presented with and without gate switching. Measured results indicate that proposed RF Amplifier achieved 0.13dB Pulse droop and 2° phase droop with gate switching. Results also indicate that PAE improvement with gate switching is 7%.