A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates

This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on-Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2
^nd
harmonic is achieved compared with HR SOI substrate.