High-voltage picosecond-range avalanche switching of semiconductor structures without pn-junctions

Delayed impact-ionization breakdown of high voltage diodes is a well-known phenomenon widely used in pulse power electronics for generating picosecond-range kilovolt voltage pulses. This effect manifests itself in 100-ps avalanche switching of p
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-n-n
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structure that occurs when a steep voltage ramp (dU/dt > 1 kV/ns) is applied to the structure in the reverse direction. Here we report experimental observation and numerical simulations of subnanosecond avalanche switching of Si and ZnSe semiconductor structures that do not contain p-n junctions.