Design of MOSFET threshold measurement circuit

This paper presents a 1V MOSFET threshold (V
_th
) measurement circuit. In this nonlinear temperature compensation is implemented using Brokaw MOS VTH circuit. Due to this compensation there is attenuation in the nonlinear temperature coefficient of the VGS which leads to reduction of the Temperature Coefficient (T.C). At the starting of the reference circuit pre-regulator block is used to improve power supply rejection (PSR) of the circuit. This threshold reference circuit is designed in 90nm CMOS process using Cadence tool.