Application Prospect of SiC Power Semiconductor Devices in Spacecraft Power Systems

With the development of electric propulsion and payload technology, Silicon Carbide which is a typical semiconductor device with wide bandgap will play a greater role in spacecraft power system in the future. It has the advantages as high breakdown voltage, high electron drift velocity, high thermal conductivity, high voltage, high frequency and high anti-radiation. This paper mainly introduces the new research progress of SiC based power diodes, JFETs and MOSFETs, as well as discusses the application prospects of SiC power semiconductor devices in spacecraft power systems.