Influence of artificially created stress in the buffer layer of the structure with active layer In0.38Ga0.62As on the THz generation by ultrashort laser pulses

Solid solution based on InyGa1-yAs is perspective material for creation devises working with terahertz frequency range. Mismatch of the crystal lattice parameters of the GaAs substrate and epitaxial In
_0.38
Ga
₀
.
₆₂
As layer causes lattice deformation. In this work we investigate the effect of artificially created stress in the epitaxial grown films and their effect on the generation of terahertz radiation.