120W S-band internally matched packaged GaN HEMT with 50% PAE for 500MHz bandwidth

In this paper, the design and the characteristics of the wide bandwidth S-band high power amplifiers are reported. The computer simulated and the experimental data has been compared. To reduce the size of the power amplifier, single layer capacitors with high dielectric constant were used. The impedance matching circuit was made on the alumina ceramic substrate. The measured data of output power, gain and PAE of the amplifier were over 120W, 9.8dB, and 50%, respectively for 2.8 ∼ 3.3GHz frequency range while the size of the package was 14.6mm × 15.6mm.